ABB 5SHX2645L0002 3HB012961R0001 IGCT模块

ABB 5SHX2645L0002  3HB012961R0001  IGCT模块

IGCT是将GTO芯片与反并联二极管和栅极驱动 电路 集成在一起，再与其 栅极驱动器 在外围以低 电感 方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50％，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.

IGCT integrates GTO chip with anti-parallel diode and gate driver circuit, and then connects with its gate driver at the periphery in a low inductance way. It combines the advantages of stable turn-off ability of transistor and low on-state loss of thyristor, and exerts the performance of thyristor in the turn-on stage, and presents the characteristics of transistor in the turn-off stage. IGCT (Intergrated Gate Com Muttered Thyristors) is a new type of power semiconductor device which was introduced in 1996 and used in giant power electronic devices. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, adopting buffer layer structure and anode transparent emitter technology. It has the on-state characteristics of thyristor and the switching characteristics of transistor. Because of the buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%. In addition, this kind of device integrates a freewheeling diode with good dynamic characteristics on one chip, thus realizing the organic combination of low on-state voltage drop of thyristor, high blocking voltage and stable switching characteristics of transistor in its unique way.

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